5秒后页面跳转
SF32GP PDF预览

SF32GP

更新时间: 2024-01-04 02:11:45
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 408K
描述
DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, DO-201AD, 2 PIN, Rectifier Diode

SF32GP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:DO-201AD, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

SF32GP 数据手册

 浏览型号SF32GP的Datasheet PDF文件第2页浏览型号SF32GP的Datasheet PDF文件第3页 
SF31G  
THRU  
SF38G  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
3 Amp High  
Efficiency Glass  
·
·
·
Low power loss, high efficiency  
Low Leakage  
Low Forward Voltage Drop  
Passivated Rectifier  
50 to 600 Volts  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
DO-201AD  
·
·
Operating Temperature: -65°C to +150°C  
Storage Temperature: -65°C to +150°C  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
SF31G  
SF32G  
SF34G  
SF35G  
SF36G  
SF38G  
SF31G  
SF32G  
SF34G  
SF35G  
SF36G  
SF38G  
50V  
35V  
70V  
140V  
210V  
280V  
420V  
50V  
100V  
200V  
300V  
400V  
600V  
100V  
200V  
300V  
400V  
600V  
A
Cathode  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3 A  
TA = 55°C  
Peak Forward Surge  
Current  
IFSM  
8.3ms, half sine  
C
125A  
Maximum Instantaneous  
Forward Voltage  
0.95V  
1.27V  
1.75V  
SF31G-35G  
SF36G  
VF  
IFM = 3.0A;  
SF38G  
TA = 25°C  
DIMENSIONS  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Maximum Reverse  
Recovery  
Time  
IR  
5 mA  
TA = 25°C  
INCHES  
MIN  
.287  
MM  
MIN  
7.30  
4.80  
1.20  
25.40  
DIM  
A
B
MAX  
.374  
.208  
MAX  
9.50  
5.30  
NOTE  
50 mA TA = 150°C  
.189  
C
D
.048  
1.000  
.052  
---  
1.30  
---  
Trr  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
35.0nS  
Typical Junction  
Capacitance  
SF31G~35G  
SF36G~38G  
CJ  
Measured at  
1.0MHz, VR=4.0V  
50pF  
30pF  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  
Revision: 2  
2006/05/31  
1 of 3  

与SF32GP相关器件

型号 品牌 获取价格 描述 数据表
SF32H31 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H31-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H32 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H32-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H34 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H35 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H36-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H36-2 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H36-3 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H36-4 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,