5秒后页面跳转
SF32G PDF预览

SF32G

更新时间: 2024-01-24 13:39:05
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 195K
描述
3.0 AMP. Glass Passivated Super Fast Rectifiers

SF32G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.04
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
湿度敏感等级:2最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:100 V最大反向恢复时间:0.035 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SF32G 数据手册

 浏览型号SF32G的Datasheet PDF文件第2页 
SF31G-SF38G  
3.0 AMP. Glass Passivated Super Fast Rectifiers  
DO-201AD  
Features  
High efficiency, low VF  
High current capability  
High reliability  
High surge current capability  
Low power loss.  
For use in low voltage, high frequency inventor, free  
wheeling, and polarity protection application  
Mechanical Data  
Case: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Polarity: Color band denotes cathode  
High temperature soldering guaranteed:  
o
260 C/10 seconds/.375”,(9.5mm) lead  
Dimensions in inches and (millimeters)  
lengths at 5 lbs., (2.3kg) tension  
Mounting position: Any  
Weight: 1.2 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SF  
38G  
Symbol SF SF  
SF  
SF  
SF  
SF  
SF  
Type Number  
Units  
31G 32G 33G 34G 35G 36G 37G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50 100 150 200 300 400 500 600  
35 70 105 140 210 280 350 420  
50 100 150 200 300 400 500 600  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
3.0  
A
I(AV)  
o
@TA = 55 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
125  
A
V
IFSM  
Maximum Instantaneous Forward Voltage  
@ 3.0A  
0.95  
1.3  
1.7  
VF  
o
Maximum DC Reverse Current @ TA=25 C  
o
5.0  
uA  
uA  
IR  
at Rated DC Blocking Voltage @ TA=125 C  
100  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance  
Trr  
Cj  
35  
nS  
pF  
80  
60  
R
35  
10  
o
θJA  
C/W  
R
θJL  
o
Operating Temperature Range TJ  
Storage Temperature Range TSTG  
TJ  
-65 to +150  
-65 to +150  
C
o
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Mount on Cu-Pad Size 16mm x 16mm on PCB.  
Notes:  
http://www.luguang.cn  
mail:lge@luguang.cn  

与SF32G相关器件

型号 品牌 获取价格 描述 数据表
SF32GP MCC

获取价格

DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, DO-201AD, 2 PIN, Rectifier Diode
SF32H31 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H31-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H32 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H32-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H34 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H35 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H36-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H36-2 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
SF32H36-3 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,