Datasheet > SF1E

SF1E

更新时间： 2024-09-26 22:50:19

品牌	Logo	应用领域
SSE		开关
页数	文件大小	规格书
1页	20K
描述
SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER

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中文翻译

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数据手册

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SF1E 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

SF1A THRU SF1G

SURFACE MOUNT SUPER

TECHNICAL

SPECIFICATION

FAST SWITCHING RECTIFIER

VOLTAGE: 50 TO 400V CURRENT: 1.0A

FEATURS

• Ideal for surface mount pick and

DSMA/DO-214AC

place application

• Low profile package

• Built-in strain relief

• High surge capability

• Open junction chip,silastic passivated

• Super fast recovery for high efficiency

• High temperature soldering guaranteed:

260^oC/10sec/at terminal

MECHANICAL DATA

• Terminal: Plated leads solderable per

.110(2.79)

.100(2.54)

.177(4.50)

.157(3.99)

.075(1.90) .012(0.305)

.052(1.32) .006(0.152)

MAX.

MIN.

MIL-STD 202E, method 208C

.208(5.28) .090(2.29) .008(0.203) .060(1.52) .035(0.88)

.194(4.93) .078(1.98) .004(0.102) .030(0.76) .027(0.68)

• Case: Molded with UL-94 Class V-O

recognized flame retardant epoxy

• Polarity: Color band denotes cathode

MAX.

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60HZ, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,

derate current by 20%)

RATINGS

SYMBOL SF1A SF1B SF1C SF1D SF1E SF1G UNITS

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

(T_L=110^oC)

100

I_F(AV)

1.0

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current)

I_FSM

V_F

0.95

1.25

T_a=25^oC

T_a=100^oC

5.0

200

Maximum DC Reverse Current

µA

^oC/W

^oC

I_R

(at rated DC blocking voltage)

Maximum Reverse Recovery Time (Note 1)

trr

C_J

Typical Junction Capacitance

Typical Thermal RSFistance

(Note 2)

(Note 3)

R_θ(ja)

-50 to +150

T_STG,T_J

Storage and Operation Junction Temperature

Note:

1.Reverse recovery condition I_F=0.5A, I_R=1.0A,Irr=0.25A.

2.Measured at 1.0 MHz and applied voltage of 4.0V_dc

3.Thermal rSFistance from junction to terminal mounted on 5×5mm copper pad area

http://www.sse-diode.com

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