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SF1608GD

更新时间： 2024-11-13 12:33:55
品牌 Logo 应用领域
THINKISEMI 整流二极管
页数 文件大小 规格书
2页 304K
描述
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes

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中文翻译

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SF1608GD 数据手册

 浏览型号SF1608GD的Datasheet PDF文件第2页 
SF1601G thru SF1608G  
®
SF1601G thru SF1608G  
Pb Free Plating Product  
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Environment|DC Motor Control  
ꢀ
ꢀ
ꢀ
Plating Power Supply|UPS  
Amplifier and Sound Device System  
.038(0.96)  
.025(0.65)MAX  
.019(0.50)  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: Molded plastic TO-220AB Heatsink  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
ꢀ
ꢀ
ꢀ
Polarity:Color band denotes cathode  
Mounting position: Any  
Weight: 2.03 grams  
Doubler  
Series Connection  
Suffix "D"  
Negative  
Common Anode  
Suffix "A"  
Positive  
Common Cathode  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G  
SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA  
SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD  
Common Cathode  
UNIT  
SYMBOL  
Common Anode Suffix "A"  
Anode and Cathode Coexistence Suffix "D"  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
V
DC  
100  
16.0  
A
A
V
IF(AV)  
Current TC  
=100oC  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
@ 8.0 A  
V
F
0.98  
1.3  
1.7  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25oC  
=125oC  
uA  
uA  
nS  
10.0  
250  
I
R
J
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
pF  
oCW  
C
J
R
JC  
2.2  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
12

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