Datasheet > SEMiX453GD17E4c

SEMiX453GD17E4c

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	277K
描述
IGBT Modules SEMiX 33c (150x163x17)

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SEMiX453GD17E4c 数据手册

SEMiX453GD17E4c

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1700

762

579

450

1350

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

SEMiX^®33c

V_CC= 1000 V

V_GE≤ 15 V

V_CES≤ 1700 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

1700

482

354

450

900

SEMiX453GD17E4c

Features

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

ꢀ Homogeneous Si

t_p= 10 ms, sin 180°, T_j= 25 °C

AC sinus 50Hz, t = 1 min

2565

-40 ... 175

°C

ꢀ Trench = Trenchgate technology

ꢀ V_CE(sat)with positive temperature

coefficient

ꢀ High short circuit capability

ꢀ UL recognized, file no. E63532

Module

I_t(RMS)

T_stg

600

-40 ... 125

4000

°C

Typical Applications*

V_isol

ꢀ AC inverter drives

ꢀ UPS

Characteristics

ꢀ Electronic Welding

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Remarks

ꢀ Case temperature limited to T_C=125 °C

I_C= 450 A

T_j= 25 °C

V_CE(sat)

1.90

2.26

2.20

2.45

max.

_GE= 15 V

T_j= 150 °C

ꢀ Product reliability results are valid for

T_j=150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

1.1

1.8

2.8

5.8

1.2

1.1

2.2

6.4

mΩ

Ω

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 18 mA

T_j= 25 °C

5.2

V_GE= 0 V

_CE= 1700 V

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

1.50

1.14

3600

1.67

270

186

810

170

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 1200 V

T_j= 150 °C

_C= 450 A

_GE= +15/-15 V

_{G on}= 2 Ω

_{G off}= 2 Ω

di/dt_on= 7560 A/µs

di/dt_off= 2400 A/µs

du/dt = 5320 V/µs

L_s= 30 nH

T_j= 150 °C

E_off

183

Rev. 2 – 20.02.2015

12 3 4 5

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