Datasheet > SEMiX443KD22p

SEMiX443KD22p

更新时间： 2024-09-30 14:57:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
3页	198K
描述
Thyristor / Diode Modules SEMiX 3p (150x62x17)

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SEMiX443KD22p 数据手册

SEMiX443KD22p

Absolute Maximum Ratings

Symbol Conditions

Recitifier Diode

Values

Unit

T_c= 85 °C

T_c= 100 °C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

I_FAV

I_FSM

i²t

580

476

10000

8200

500000

336200

2300

T_j= 150 °C

sin. 180

10 ms

A²s

°C

SEMiX^®3p

V_RSM

V_RRM

T_j

2200

-40 ... 150

Module

T_stg

V_isol

-40 ... 125

4000

4800

°C

1 min

1 s

SEMiX443KD22p

Features

AC sinus 50Hz

Characteristics

• Rectifier PEP technology for enhanced

power and environmental robustness

• T_jmax= 150°C

Symbol Conditions

Diode

min.

typ.

max.

Unit

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

V_F

1.20

1.17

0.90

0.78

0.17

0.22

1.37

1.36

0.97

0.83

0.22

0.29

4.6

I_F= 1812 A

chiplevel

• NTC temperature sensor

• Press-fit pins as auxiliary contacts

• Terminal height 17 mm

V_(TO)

r_T

• UL recognised file no. E63532

Typical Applications*

mΩ

K/W

chiplevel

• Input Bridge Rectifier for AC/DC motor

control

I_RD

T_j= 125 °C, V_RD= V_RRM

• Power supply

per diode

R_th(j-c)

0.09

sin. 180

Remarks

• Product reliability results are valid for

T_j=150°C

per Diode (λ_grease=0.81 W/(m*K))

per Diode, pre-applied phase change

material

R_th(c-s)

0.034

0.017

K/W

• V_isolbetween temperature sensor and

power section is only 2500V

Module

• For storage and case temperature with

TIM see document “TP(*) SEMiX 3p”

_C= 25 °C

_C= 125 °C

R_CC'+EE'

0.4

0.5

0.017

mΩ

K/W

measured per

switch

Rth_(c-s)1

Rth_(c-s)2

calculated without thermal coupling

including thermal coupling,

Ts underneath module (λ_grease=0.81 W/

(m*K))

0.024

K/W

including thermal coupling,

Ts underneath module, pre-applied

phase change material

Rth_(c-s)2

0.013

K/W

M_s

M_t

to heat sink (M5)

to terminals (M6)

m/s²

5 * 9.81

360

Temperature Sensor

R₁₀₀

T_c=100°C (R₂₅=5 kΩ)

493 ± 5%

3550

±2%

B_100/125

R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];

Rev. 1.0 – 05.04.2018

12 3

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