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SEMiX405TMLI12E4B PDF预览

SEMiX405TMLI12E4B

更新时间: 2024-09-30 14:54:19
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
10页 1147K
描述
IGBT Modules SEMiX 5p (130x70x17)

SEMiX405TMLI12E4B 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.64
最大集电极电流 (IC):543 A集电极-发射极最大电压:650 V
门极-发射极最大电压:20 V元件数量:1
最高工作温度:150 °C子类别:Insulated Gate BIP Transistors
VCEsat-Max:2.05 VBase Number Matches:1

SEMiX405TMLI12E4B 数据手册

 浏览型号SEMiX405TMLI12E4B的Datasheet PDF文件第2页浏览型号SEMiX405TMLI12E4B的Datasheet PDF文件第3页浏览型号SEMiX405TMLI12E4B的Datasheet PDF文件第4页浏览型号SEMiX405TMLI12E4B的Datasheet PDF文件第5页浏览型号SEMiX405TMLI12E4B的Datasheet PDF文件第6页浏览型号SEMiX405TMLI12E4B的Datasheet PDF文件第7页 
SEMiX405TMLI12E4B  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT1  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
636  
490  
400  
1200  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
SEMiX® 5  
VCC = 800 V, VGE 15 V, Tj = 150 °C,  
CES 1200 V  
tpsc  
10  
µs  
°C  
V
Tj  
-40 ... 175  
3-Level TNPC IGBT-Module  
SEMiX405TMLI12E4B  
Features*  
IGBT2  
VCES  
IC  
Tj = 25 °C  
650  
452  
339  
400  
1200  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
• Solderless assembling solution with  
PressFIT signal pins and screw power  
terminals  
VCC = 360 V, VGE 15 V, Tj = 150 °C,  
CES 650 V  
tpsc  
Tj  
10  
µs  
°C  
V
-40 ... 175  
• IGBT 4 Trench Gate Technology  
• VCE(sat) with positive temperature  
coefficient  
Diode1  
VRRM  
IF  
Tj = 25 °C  
1200  
461  
345  
800  
1980  
V
A
A
A
A
• Low inductance case  
Tc = 25 °C  
Tc = 80 °C  
• Reliable mechanical design with  
injection moulded terminals and  
reliable internal connections  
• UL recognized file no. E63532  
• NTC temperature sensor inside  
Tj = 175 °C  
IFRM  
IFSM  
Tj  
10 ms, sin 180°, Tj = 25 °C  
-40 ... 175  
°C  
Remarks*  
Diode2  
VRRM  
IF  
• Case temperature limited to TC=125°C  
max  
Tj = 25 °C  
650  
466  
338  
V
A
A
Tc = 25 °C  
Tc = 80 °C  
• Product reliability results are valid for  
Tj = 175 °C  
T
jop=150°C  
IFRM  
IFSM  
Tj  
800  
2646  
-40 ... 175  
A
A
°C  
• IGBT1: outer IGBTs T1 & T4  
• IGBT2: inner IGBTs T2 & T3  
• Diode1: outer diodes D1 & D4  
• Diode2: inner diodes D2 & D3  
• For storage and case temperature with  
TIM see document “TP(HALA P8)  
SEMiX 5p”  
10 ms, sin 180°, Tj = 25 °C  
Module  
It(RMS)  
Tstg  
450  
-40 ... 125  
4000  
A
°C  
V
module without TIM  
AC sinus 50Hz, t = 1 min  
Visol  
TMLI  
© by SEMIKRON  
Rev. 7.0 – 18.03.2022  
1

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