是否无铅: | 不含铅 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | LEAD FREE, PLASTIC, DIP-8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
风险等级: | 5.39 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.7 µA | 25C 时的最大偏置电流 (IIB): | 0.4 µA |
标称共模抑制比: | 100 dB | 频率补偿: | YES |
最大输入失调电压: | 3000 µV | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 长度: | 9.78 mm |
低-失调: | NO | 负供电电压上限: | -22 V |
标称负供电电压 (Vsup): | -15 V | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP7/8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
包装方法: | RAIL | 峰值回流温度(摄氏度): | 260 |
电源: | +-15 V | 认证状态: | Not Qualified |
座面最大高度: | 4.45 mm | 标称压摆率: | 9 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 13 mA |
供电电压上限: | 22 V | 标称供电电压 (Vsup): | 15 V |
表面贴装: | NO | 技术: | BIPOLAR |
温度等级: | MILITARY | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
标称均一增益带宽: | 10000 kHz | 最小电压增益: | 20000 |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SE5532N | ONSEMI |
完全替代 |
Internally Compensated Dual Low Noise Operational Amplifier | |
SE5532AD8R2G | ONSEMI |
功能相似 |
Internally Compensated Dual Low Noise Operational Amplifier |
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SE5533AF/883B | PHILIPS |
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LOW-NOISE OPERATIONAL AMPLIFIERS | |
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SE5534AF | NXP |
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