Datasheet > SE2310

SE2310

更新时间： 2025-01-13 01:25:07

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
4页	269K
描述
P l a s t i c -Encapsulate MOSFETS

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SE2310 数据手册

WILLAS

SE2310

SOT-23 Plastic-Encapsulate MOSFETS

N-Channel MOSFET

DESCRIPTION

The SE2310 uses advanced trench technology to provide excellent

R_DS(ON), low gate charge and operation with gate voltage as low as 2.5V.

This device is suitable for use as a battery protection or in other switching

application.

FEATURES



High power and current handing capability

Lead free product is acquired

Surface mount package

Moisture Sensitivity Level 1

APPLICATION



Battery Switch

DC/DC Converter

MARKING: S10

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

V_DS

V_GS

I_D

Value

Unit

±20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (note 1)

Power Dissipation

I_DM

P_D

0.35

357

Thermal Resistance from Junction to Ambient (note 2)

Junction Temperature

R_θJA

T_J

℃/W

℃

150

Storage Temperature

T_STG

-55~+150

℃

2013-10

WILLAS ELECTRONIC CORP.

12 3 4

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