SE2306 PDF预览

SE2306

更新时间: 2025-02-09 18:28:07
品牌 Logo 应用领域
雷卯电子 - LEIDITECH /
页数 文件大小 规格书
6页 893K
描述
Package : SOT-23; Vdss Min(V) Drain-Source voltage : 20; Drain Current ID(A)25℃ : 6; Vgs(V) : 10; Vth Typ : 0.7; Ron(10V) (mΩ)Typ : -; Ron(10V) (mΩ) Max : -; Ron(4.5V) (mΩ)Typ : 20; Ron(4.5V) (mΩ)Max : 28;

SE2306 数据手册

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Pb Free Product  
SE2306  
LCE N-Channel Enhancement Mode Power MOSFET  
Description  
The SE2306 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 1.8V. This device is suitable for use as a  
uni-directional or bi-directional load switch.  
D
G
General Features  
VDS = 20V,ID = 6A  
S
Schematic diagram  
RDS(ON) < 35m@ VGS=2.5V  
RDS(ON) < 28m@ VGS=4.5V  
High Power and current handing capability  
Lead free product is acquired  
Surface Mount Package  
Application  
Uni-directional Load switch  
SOT-23 top view  
Bi-directional Load switch  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
3420  
SE2306  
SOT-23  
Ø180mm  
8 mm  
3000 units  
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
20  
±10  
V
V
VDS  
Gate-Source Voltage  
VGS  
Drain Current-Continuous  
Drain Current-Pulsed (Note 1)  
6
A
ID  
30  
A
IDM  
Maximum Power Dissipation  
1.25  
W
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
100  
/W  
Electrical Characteristics (TA=25unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ  
Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
BVDSS  
IDSS  
VGS=0V ID=250μA  
20  
-
22  
-
-
V
VDS=20V,VGS=0V  
1
μA  
Rev :01.06.2014  
1/6  
www.leiditech.com  

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