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SE07PB-E3/84A PDF预览

SE07PB-E3/84A

更新时间: 2024-11-07 19:40:47
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 89K
描述
Rectifier Diode, 1 Element, 0.7A, 100V V(RRM),

SE07PB-E3/84A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 V最大非重复峰值正向电流:20 A
元件数量:1最高工作温度:175 °C
最大输出电流:0.7 A最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

SE07PB-E3/84A 数据手册

 浏览型号SE07PB-E3/84A的Datasheet PDF文件第2页浏览型号SE07PB-E3/84A的Datasheet PDF文件第3页浏览型号SE07PB-E3/84A的Datasheet PDF文件第4页 
SE07PB, SE07PD, SE07PG, SE07PJ  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount ESD Capability Rectifiers  
FEATURES  
eSMP® Series  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Oxide planar chip junction  
• Low forward voltage drop  
• Typical IR less than 0.1 μA  
• ESD capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-220AA (SMP)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
0.7 A  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
IR  
100 V, 200 V, 400 V, 600 V  
5 μA  
VF at IF = 1.0 A  
TJ max.  
0.865 V  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
175 °C  
commercial grade  
Package  
DO-220AA (SMP)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Diode variations  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes the cathode end  
TYPICAL APPLICATIONS  
General purpose, polarity protection, and rail-to-rail  
protection in consumer applications.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL SE07PB  
SE07PD  
07D  
SE07PG  
07G  
SE07PJ  
07J  
UNIT  
Device marking code  
07B  
100  
Max. repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
200  
400  
600  
V
A
1.0  
20  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.965  
0.865  
-
MAX.  
UNIT  
TA = 25 °C  
IF = 0.7 A  
1.05  
0.95  
5.0  
50  
Max. instantaneous  
forward voltage  
(1)  
VF  
V
TA = 125 °C  
TA = 25 °C  
Rated VR  
(2)  
Max. reverse current  
IR  
μA  
pF  
TA = 125 °C  
3.7  
Typical junction capacitance  
4.0 V, 1 MHz  
CJ  
5.0  
-
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
Revision: 27-Jul-15  
Document Number: 89023  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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