Datasheet > SDSL34F

SDSL34F

更新时间： 2024-11-29 14:55:47

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	153K
描述
肖特基整流管

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数据手册

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SDSL34F 数据手册

SDSL34F

Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 40 V

Forward Current - 3 A

PINNING

DESCRIPTION

Cathode

Features

Anode

• Metal silicon junction, majority carrier conduction

• For surface mounted applications

• Low power loss, high efficiency

• High forward surge current capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Top view

Plastic Package : SMAF

Maximum Ratings and Electrical Characteristics

Ratings at T_a= 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive

load, for capacitive load current derate by 20%.

Symbols

V_RRM

V_RMS

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Value

Unit

Maximum DC Blocking Voltage

V_DC

Maximum Average Forward Rectified Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_FSM

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Unit

Value

Typical Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Voltage

at I_F= 3 A

Reverse Current

at V_R= 40 V

V_F

I_R

0.55

0.1

at V_R= 40 V, T_j= 125℃

Junction Capacitance

at V_R= 4 V, f = 1 MHz

C_j

250

1 / 3

Dated: 15/06/2022 Rev: 02

12 3

中文翻译

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