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SDS510F PDF预览

SDS510F

更新时间: 2024-11-26 14:53:23
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
3页 184K
描述
肖特基整流管

SDS510F 数据手册

 浏览型号SDS510F的Datasheet PDF文件第2页浏览型号SDS510F的Datasheet PDF文件第3页 
SDS52F THRU SDS520F  
Surface Mount Schottky Barrier Rectifiers  
Reverse Voltage - 20 to 200 V  
Forward Current - 5 A  
PINNING  
PIN  
1
DESCRIPTION  
Cathode  
Features  
• Metal silicon junction, majority carrier conduction  
• For surface mounted applications  
• Low power loss, high efficiency  
Anode  
2
• High forward surge current capability  
• For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
1
2
Top view  
Plastic Package : SMAF  
Maximum Ratings and Electrical Characteristics  
Ratings at 25ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load,  
for capacitive load current derate by 20%.  
SDS SDS SDS SDS SDS SDS SDS SDS  
Parameter  
Unit  
V
Symbols  
VRRM  
VRMS  
VDC  
52F  
54F  
56F  
58F 510F 512F 515F 520F  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
20  
40  
60  
80  
56  
80  
100 120 150 200  
70 84 105 140  
100 120 150 200  
14  
20  
28  
40  
42  
60  
V
Maximum DC Blocking Voltage  
V
Maximum Average Forward Rectified Current  
IF(AV)  
5
A
Peak Forward Surge Current 8.3 ms Half Sine-wave  
Superimposed on Rated Load (JEDEC method)  
IFSM  
VF  
IR  
150  
A
V
Maximum Instantaneous Forward Voltage at 5 A  
0.55  
0.7  
0.85  
Tj = 25℃  
Tj = 100℃  
1
50  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
mA  
Typical Junction Capacitance 1)  
Cj  
RθJA  
Tj  
500  
300  
pF  
℃/W  
Typical Thermal Resistance, Junction to Ambient 2)  
Operating Junction Temperature Range  
60  
- 55 to + 150  
- 55 to + 150  
Storage Temperature Range  
Tstg  
1) Measured at 1MHz and applied reverse voltage of 4 V D.C.  
2) P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
1 / 3  
®
Dated: 17/10/2022 JD Rev : 06  

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