SDS32F THRU SDS320F
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 3 A
PINNING
PIN
1
DESCRIPTION
Cathode
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
Anode
2
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
1
2
Top view
Plastic Package : SMAF
Mechanical Data
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for
capacitive load current derate by 20%.
Symbols
Marking
Unit
-
SDS32F SDS34F SDS345F SDS36F SDS38F SDS310FSDS312FSDS315FSDS320F
Parameter
SS32
20
SS34
40
SS345
45
SS36
60
SS38
80
56
80
3
SS310 SS312 SS315 SS320
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
100
70
120
84
150
105
150
200
140
200
V
V
V
A
14
28
32
42
Maximum DC Blocking Voltage
20
40
45
60
100
120
Maximum Average Forward Rectified Current
IF(AV)
Peak Forward Surge Current 8.3 ms Half Sine-wave
Superimposed on Rated Load (JEDEC method)
IFSM
VF
80
A
V
Maximum Instantaneous Forward Voltage at 3 A
0.55
250
0.7
0.85
0.95
Ta = 25℃
Ta = 100℃
0.5
10
0.3
5
Maximum DC Reverse Current at
Rated DC Blocking Voltage
mA
pF
IR
Typical Junction Capacitance 1)
Cj
180
RθJA
RθJC
70
18
Typical Thermal Resistance 2)
℃/W
Operating Junction Temperature Range
Storage Temperature Range
Tj
- 55 to + 125
- 55 to + 150
℃
℃
Tstg
1) Measured at 1MHz and applied reverse voltage of 4 V D.C.
2) P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas.
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®
Dated: 02/12/2021 JD Rev: 05