Datasheet > SDS2450FF

SDS2450FF

更新时间： 2024-09-24 14:54:59

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	157K
描述
肖特基整流管

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中文翻译

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SDS2450FF 数据手册

SDS2450FF

Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 40 V

Forward Current - 2 A

PINNING

DESCRIPTION

Cathode

Features

Anode

• Metal silicon junction, majority carrier conduction

• For surface mounted applications

• Low power loss, high efficiency

• High forward surge current capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Top view

Plastic Package : SMAF

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for

capacitive load current derate by 20%.

Symbols

V_RRM

V_RMS

Value

Unit

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

V_DC

Maximum Average Forward Rectified Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_FSM

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

Unit

Typical Thermal Resistance, Junction to Ambient ¹⁾

℃/W

Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

Electrical Characteristics (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

V_(BR)R

at I_R= 100 µA

Forward Voltage

at I_F= 2 A

V_F

I_R

0.55

Reverse Current

at V_R= 40 V

0.1

at V_R= 40 V, T_j= 100℃

Junction Capacitance

at V_R= 4 V, f = 1 MHz

C_j

1 / 3

Dated: 19/09/2023 Rev : 01

12 3

中文翻译

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