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SDS12F PDF预览

SDS12F

更新时间: 2023-12-06 20:06:29
品牌 Logo 应用领域
先科 - SWST 肖特基二极管
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3页 466K
描述
肖特基二极管

SDS12F 数据手册

 浏览型号SDS12F的Datasheet PDF文件第2页浏览型号SDS12F的Datasheet PDF文件第3页 
SDS12F THRU SDS120F  
Surface Mount Schottky Barrier Rectifiers  
Reverse Voltage - 20 to 200 V  
Forward Current - 1 A  
PINNING  
PIN  
1
DESCRIPTION  
Cathode  
Features  
Metal silicon junction, majority carrier conduction  
For surface mounted applications  
Low power loss, high efficiency  
Anode  
2
High forward surge current capability  
For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
1
2
Top view  
Plastic Package : SMAF  
Mechanical Data  
Case: SMAF molded plastic body  
Terminals: Solderable per MIL-STD-750,Method 2026  
Maximum Ratings and Electrical Characteristics  
Ratings at 25ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, for  
capacitive load, derate by 20 %  
SDS  
12F  
SDS  
14F  
SDS  
16F  
SDS  
18F  
SDS  
110F  
SDS  
112F  
SDS  
115F 120F  
SDS  
Symbols  
Unit  
-
Parameter  
Marking SS12 SS14 SS16 SS18 SS110 SS112 SS115 SS120  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
40  
28  
40  
60  
42  
60  
80  
56  
80  
100  
70  
120  
84  
150  
105  
150  
200  
140  
200  
V
V
Maximum DC Blocking Voltage  
100  
120  
V
Maximum Average Forward Rectified Current  
IF(AV)  
1
A
Peak Forward Surge Current 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load  
(JEDEC Method)  
IFSM  
40  
30  
A
V
Maximum Instantaneous Forward Voltage at 1 A  
VF  
IR  
0.55  
0.7  
0.85  
0.9  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25℃  
Ta = 100℃  
0.3  
10  
0.2  
5
0.1  
2
mA  
pF  
Typical Junction Capacitance 1)  
Typical Thermal Resistance 2)  
Maximum Reverse Recovery Time 3)  
Cj  
110  
80  
RθJA  
RθJC  
95  
85  
/W  
Trr  
Tj  
15  
ns  
Operating Junction Temperature Range  
Storage Temperature Range  
- 55 to + 125  
- 55 to + 150  
Tstg  
1) Measured at 1MHz and applied reverse voltage of 4 V D.C.  
2) P.C.B. mounted with 2.0 X 2.0" (5 X 5 cm) copper pad areas.  
3) Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A  
1 / 3  
®
Dated25/01/2022 JD Rev06  

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