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SDR1186TX PDF预览

SDR1186TX

更新时间: 2024-10-14 04:32:27
品牌 Logo 应用领域
SSDI 整流二极管
页数 文件大小 规格书
2页 93K
描述
35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER

SDR1186TX 技术参数

生命周期:Active零件包装代码:DO-5
包装说明:O-MUPM-D1针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.31
Is Samacsys:N应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-5
JESD-30 代码:O-MUPM-D1最大非重复峰值正向电流:500 A
元件数量:1相数:1
端子数量:1最大输出电流:35 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:5 µs
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPERBase Number Matches:1

SDR1186TX 数据手册

 浏览型号SDR1186TX的Datasheet PDF文件第2页 
SDR1183  
Thru  
SDR1190  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Designer’s Data Sheet  
35 Amp  
Part Number/Ordering Information 1/  
SDR11  
50-600 Volt  
__ __  
Screening 2/ __ = Not Screened  
TX = TX Level  
5 μsec  
STANDARD RECOVERY  
RECTIFIER  
TXV = TXV Level  
S = S Level  
Pin Configuration __ = Normal (Cathode to Stud)  
Features:  
(See Table 1)  
R = Reverse (Anode to Stud)  
Low Reverse Leakage Current  
Single Chip Construction  
Family/Voltage  
83 = 50V  
PIV to 600V  
84 = 100V  
85 = 150V  
86 = 200V  
87 = 300V  
88 = 400V  
89 = 500V  
90 = 600V  
Hermetically Sealed  
Low Thermal Resistance  
Higher Voltage Devices Up to 1400V Available*  
Fast and Ultra Fast Recovery Versions Available*  
For Reverse Polarity Add Suffix “R”  
Replacement for 1N1183, 1N1184, 1N1185, 1N1186,  
1N1187, 1N1188, 1N1189, and 1N1190  
TX, TXV, and S-Level Screening Available 2/  
*Contact Factory  
Maximum Ratings  
Symbol  
Value  
Units  
SDR1183  
50  
SDR1184  
SDR1185  
SDR1186  
SDR1187  
SDR1188  
SDR1189  
SDR1190  
100  
150  
200  
300  
400  
500  
600  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse and DC Blocking  
Voltage  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)  
Io  
IFSM  
35  
500  
Amps  
Amps  
ºC  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)  
Operating & Storage Temperature  
TOP & TSTG  
RθJC  
-65 to +150  
1.0  
Maximum Total Thermal Resistance  
Junction to Case  
ºC/W  
DO-5:  
Notes:  
1/ For ordering information, price, operating curves, and availability- contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: R00005B  
DOC  

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