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SDR10GSMSS PDF预览

SDR10GSMSS

更新时间: 2024-01-07 12:27:59
品牌 Logo 应用领域
SSDI 整流二极管
页数 文件大小 规格书
2页 175K
描述
10 AMPS 200 - 1000 VOLTS 5 ns STANDARD RECOVERY RECTIFIER

SDR10GSMSS 技术参数

生命周期:Active包装说明:E-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.63Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:E-XALF-W2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:UNSPECIFIED
封装形状:ELLIPTICAL封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:5 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

SDR10GSMSS 数据手册

 浏览型号SDR10GSMSS的Datasheet PDF文件第2页 
SDR10D thru SDR10M  
and  
SDR10DSMS thru SDR10MSMS  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
10 AMPS  
Designer’s Data Sheet  
200 1000 VOLTS  
Part Number/Ordering Information 1/  
5 µs STANDARD RECOVERY  
RECTIFIER  
SDR10 __ __ __  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
FEATURES:  
Standard Recovery: 5 µs maximum 4/  
PIV to 1000 Volts  
S = S Level  
Hermetically Sealed  
Low Reverse Leakage Current  
Single Chip Construction  
High Surge Rating  
Replaces Larger DO-4 Rectifiers  
Low Thermal Resistance  
Package Type  
__ = Axial Leaded  
SMS = Surface Mount Square Tab  
Voltage/Family  
Available in Axial & Square Tab Versions  
D = 200V  
G = 400V  
J = 600V  
K = 800 V  
M = 1000 V  
TX, TXV, and S-Level Screening Available 2/  
Faster Recovery Devices Available - Contact  
Factory  
MAXIMUM RATINGS 3/  
RATING  
SYMBOL VALUE  
UNIT  
SDR10D & SDR10DSMS  
SDR10G & SDR10GSMS  
SDR10J & SDR10JSMS  
SDR10K & SDR10KSMS  
SDR10M & SDR10MSMS  
200  
400  
600  
800  
1000  
Peak Repetitive Reverse  
Voltage  
VRRM  
VRWM  
VR  
Volts  
And  
DC Blocking Voltage  
10.0  
Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25°C )  
IO  
Amps  
Amps  
Peak Surge Current  
(8.3 ms pulse, half sine wave, superimposed on Io, allow  
junction to reach equilibrium between pulses, TA = 25°C)  
150  
IFSM  
TJ and  
TSTG  
-65 to +175  
Operating & Storage Temperature  
°C  
Junction to Lead for Axial, L =.125"  
Thermal Resistance  
RθJL  
RθJE  
8
4
°C/W  
Junction to End Tab for Surface Mount  
NOTES:  
Axial Leaded  
SMS  
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.  
4/ IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: R00001C  
DOC  

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