Datasheet > SDP8405-011

SDP8405-011

更新时间： 2024-02-11 13:39:12

品牌	Logo	应用领域
霍尼韦尔 - HONEYWELL		晶体光电晶体管光电晶体管
页数	文件大小	规格书
4页	464K
描述
Silicon Phototransistor

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中文翻译

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技术参数
数据手册

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SDP8405-011 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC PACKAGE-2
Reach Compliance Code：	unknown	HTS代码：	8541.40.70.80
风险等级：	5.82	Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE	最大暗电源：	100 nA
红外线范围：	YES	标称光电流：	0.16 mA
功能数量：	1	最高工作温度：	85 °C
最低工作温度：	-40 °C	光电设备类型：	PHOTO TRANSISTOR
形状：	ROUND	尺寸：	3.05 mm
Base Number Matches：	1

SDP8405-011 数据手册

17 September 1997

SDP8405

Silicon Phototransistor

FEATURES

T-1 plastic package

20¡ (nominal) acceptance angle

Consistent optical properties

Wide sensitivity ranges

Mechanically and spectrally matched to

SEP8505 and SEP8705 infrared emitting diodes

INFRA-22.TIF

DESCRIPTION

OUTLINE DIMENSIONS in inches (mm)

The SDP8405 is an NPN silicon phototransistor transfer

molded in a T-1 clear plastic package. Transfer molding

of this device assures superior optical centerline

performance compared to other molding processes.

Lead lengths are staggered to provide a simple method

of polarity identification.

Tolerance

3 plc decimals

2 plc decimals

±0.005(0.12)

±0.020(0.51)

.200(5.08)

.180(4.57)

.03(.76)

.020SQ.LEAD TYP.

(.51)

.05(1.27)

.050

COLLECTOR

(1.27)

EMITTER

.125(3.18)

DIA.

.155

.115(2.92)

DIA.

(3.94)

.500

MIN.

(12.7)

.250

(6.35)

MAX.

DIM_100.ds4

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

12 3 4

中文翻译

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