Datasheet > SDC06_01

SDC06_01

更新时间： 2024-11-28 09:30:35

品牌	Logo	应用领域
三垦 - SANKEN		二极管
页数	文件大小	规格书
1页	31K
描述
NPN With built-in avalanche diode

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中文翻译

获取价格

数据手册

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SDC06_01 数据手册

NPN

• • •

With built-in avalanche diode

External dimensions

SDC06

Absolute maximum ratings

Electrical characteristics

(Ta=25°C)

Specification

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

max

VCBO

VCEO

VEBO

30 to 45

ICBO

IEBO

VCEO

hFE

µA

VCB=30V

VEB=6V

30 to 45

1.2

2.8

IC=10mA

400

700

2000

0.2

0.6

2.0

VCE=4V, IC=0.5A

IC=0.5A, IB=5mA

IC=1A, IB=5mA

IFEC=1A

ICP

3 (PW≤1ms, Du≤10%)

VCE(sat)

3 (Ta=25°C)

150

VFEC

ton

°C

°C/W

1.2

18.0

3.6

µs

MHz

VCC 10V,

Tstg

θ j–a

–40 to +150

41.6

tstg

IC=0.5A,

IB1=5mA, IB2=0A

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

L=10mH, Single pulse

■Equivalent circuit diagram

Cob

ES/B

15,16

13,14

11,12

9,10

R^B

RBE

RB: 800Ω typ RBE: 2kΩ typ

Characteristic curves

IC-VCE Characteristics (Typical)

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(VCE=4V)

(V^CE=4V)

1000

IB=30mA

8mA

5mA

typ

12mA

500

a=125°C

3mA

2mA

75°C

25°C

–30°C

1mA

100

0.03 0.05

100

0.03 0.05

0.1

0.5

0.1

0.5

CE (V)

C (A)

V^CE(sat)-IC Temperature Characteristics (Typical)

VCE(sat)-IB Characteristics (Typical)

IC-VBE Temperature Characteristics (Typical)

/ I

B=100)

IC=1A

IC=0.5A

–30°C

0.2

0.5

(A)

IB (mA)

θ j-a-PW Characteristics

PT-Ta Characteristics

Safe Operating Area (SOA)

1-1 Chip Operation

2-2 Chip Operation

3-3 Chip Operation

4-4 Chip Operation

1mS

0.5

Single Pulse

Without Heatsink

Ta=25°C

0.1

50 100

500 1000

100

150

PW (mS)

Ta (°C)

CE (V)

196

中文翻译

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