Datasheet > SDB160

SDB160

更新时间： 2023-12-06 20:09:42

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	188K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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SDB160 数据手册

SDB160

Surface Mount Schottky Barrier Diode

Features

• Low forward voltage drop

• Low reverse leakage

SOT-23 Plastic Package

1. Anode 2. NC 3. Cathode

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RWM

V_R

I_F(AV)

Average Rectified Forward Current

Repetitive Peak Forward Current

Peak Forward Surge Current (8.3 ms)

Power Dissipation

1.6

I_FRM

I_FSM

P_D

500

℃

Junction Temperature

T_j

- 65 to +150

Storage Temperature Range

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

250

Unit

Typical Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 300 μA

Forward Voltage

at I_F= 500 mA

at I_F= 750 mA

at I_F= 1 A

0.47

0.53

0.6

V_F

at I_F= 1.5 A

0.74

Reverse Current

at V_R= 45 V

I_R

100

µA

Total Capacitance

at V_R= 25 V, f = 1 MHz

C_T

1 / 3

Dated：24/05/2023 Rev：03

12 3

中文翻译

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