Datasheet > SDB115HC

SDB115HC

更新时间： 2024-09-24 14:52:07

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
4页	238K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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SDB115HC 数据手册

SDB12HC THRU SDB120HC

Surface Mount Schottky Barrier Rectifiers

Reverse Voltage - 20 to 200 V

PINNING

Forward Current - 1 A

DESCRIPTION

Cathode

Anode

Top View

Simplified outline SOD-123HE and symbol

Absolute Maximum Ratings and Characteristics

Ratings at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SDB SDB SDB SDB SDB

12HC 14HC 16HC 18HC 110HC 115HC 120HC

SDB

Units

Parameter

Symbols

100

150

105

150

200

141

200

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at T_L= 75℃

Peak Forward Surge Current 8.3 ms Single Half

Sine-Wave Superimposed on Rated Load

(JEDEC Method)

I_F(AV)

I_FSM

Maximum Forward Voltage at 1 A

V_F

I_R

0.55

0.7

0.85

T_a= 25℃

T_a= 100℃

Maximum Reverse Current

at Rated DC Blocking Voltage

0.1

110 ¹⁾

0.002

23 ²⁾

Typical Junction Capacitance

Typical Thermal Resistance ³⁾

Operating Junction Temperature Range

Storage Temperature Range

C_j

R_θJA

T_j

℃/W

℃

110

- 55 to + 125

- 55 to + 150

℃

T_stg

¹⁾Measured at 1 MHz and applied reverse voltage of 4 V.

²⁾Measured at 1 MHz and applied reverse voltage of 5 V.

Thermal resistance junction to ambient 0.24" x 0.24"(6 x 6 mm) copper pads to each terminals.

1 / 4

Dated: 08/04/2022 Rev: 03

12 3 4

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