Datasheet > SDA1009S

SDA1009S

更新时间： 2024-09-25 18:05:03

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描述
DIODE ARRAY

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技术参数
数据手册

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SDA1009S 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

SDA1009S 数据手册

SENSITRON________ _

SEMICONDUCTOR

SDA1009SS

SDA1009S

TECHNICAL DATA

DATA SHEET 5482, REV.

Diode Array

 Devices Are Serialized

 Eight sets of double diodes in a single package

 Die manufactured on qualified JANS line

 Built and screened to space level quality (SDA1009SS)

 Quality Conformance Inspection (QCI) in accordance with MIL-PRF-38534 is performed

on each lot (SDA1009SS)

 Add suffix “S” for screening per MIL-PRF-38534, Class H (SDA1009S)

 Add suffix “SS” for Space Level Screening per MIL-PRF-38534, Class K (SDA1009SS)

 Each diode similar to JANS1N5615

MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE

All rating at are T_A= 25^OC unless otherwise specified

RATING

SYMBOL

MAX

UNIT

Peak Inverse Voltage (DC)

PIV

400

Average DC Output Current Per Diode

T_A= 55^oC

I_O

0.75

T_A= 100^oC

Peak Single Cycle Surge Current ⁽¹⁾

(T_P=8.3ms single half-Sine wave)

Steady State Power Dissipation per

Package ⁽²⁾

I_FSM

P_T

1000

Max. Operating Junction Temperature

Max. Operating Ambient Temperature

Storage Temperature Range

T_J

-55 to +150

-30 to 100

-65 to +175

^oC

T_OP

T_STG

Maximum forward voltage @ 3.0A

Tp = 300µs; 2% duty cycle

Maximum Instantaneous Reverse

Current At Rated (PIV)

Max. Reverse Recovery Time

I_F=0.5 A, I_R= 1.0A, I_RR=0.25A

Max. Capacitance

V_f

3.2

T_A= 25^oC

0.5

A

T_A= 100^oC

t_rr

150

C_T

f= 1MHz, V_R= 12V

Thermal Resistance Junction to Case

_JC

^oC/W

Note: (1) Each diode

(2) Derate at 8mW/⁰C above 25⁰C

(631) 586-7600 FAX (631) 242-9798  www.sensitron.com  sales@sensitron.com

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