SDA1006
SDA1006S
SDA1006SS
SENSITRON_________
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5434, REV. A.1
Diode Array
Devices are serialized
Eight 1N5615 diodes in surface mount package
Die manufactured on qualified JANS line
Built and screened to space level quality (SDA1006SS)
Quality Conformance Inspection (QCI) in accordance with MIL-PRF-38534 is performed
on each lot (SDA1006SS)
Add suffix “S” for screening per MIL-PRF-38534, Class H (SDA1006S)
Add suffix “SS” for Space Level Screening per MIL-PRF-38534, Class K (SDA1006SS)
MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE
All rating at are TA = 25OC unless otherwise specified
RATING
SYMBOL
MAX
UNIT
Peak Inverse Voltage (DC)
PIV
200
V
Average DC Output Current Per Diode
TA = 55oC
IO
1
0.75
A
TA = 100oC
Peak Single Cycle Surge Current (1)
(TP=8.3ms single half-Sine wave)
Steady State Power Dissipation per
Package (2)
IFSM
PT
10
A
1000
mW
Max. Operating Junction Temperature
Max. Operating Ambient Temperature
Storage Temperature Range
TJ
-55 to +150
-30 to 100
-65 to +175
oC
oC
oC
TOP
TSTG
Maximum forward voltage @ 3.0A
Tp = 300µs; 2% duty cycle
Maximum Instantaneous Reverse
Current At Rated (PIV)
Max. Reverse Recovery Time
IF =0.5 A, IR= 1.0A, IRR =0.25A
Max. Capacitance
Vf
1.6
V
TA= 25oC
0.5
25
A
ns
TA = 100oC
trr
150
CT
45
21
pF
f= 1MHz, VR = 12V
Thermal Resistance Junction to Case
JC
oC/W
Note: (1) Each diode
(2) Derate at 8mW/0C above 250C
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