SDA1004SS
TECHNICAL DATA
DATASHEET 5309, Rev A
Diode Array
Devices Are Serialized
Built And Screened To Space Level Quality
Space Quality Level Conformance Testing Is Performed On Each Lot
MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE
All rating at are TA = 25OC unless otherwise specified
RATING
SYMBOL
MAX
75
UNIT
V
Peak Inverse Voltage (DC)
PIV
IO
Average DC Output Current Per diode
50
mA
Peak Single Cycle Surge Current (1) (2)
(TP=8.3ms single half-Sine wave)
Peak Repetitive Surge Current (1) (3)
(TP=8.3ms half-Sine wave)
Steady State Power Dissipation per
Diode Junction
IFSM
IFRM
PD
500
300
400
500
mA
mA
mW
Steady State Power Dissipation per
Package (3)
PT
mW
Max. Operating Junction Temperature
Storage Temperature Range
TJ
-65 to +150
-65 to +200
oC
oC
TSTG
Max. Forward Voltage
IF = 10mA
Max. Forward Voltage Match
IF = 10mA
VF1
1
5
V
VFM
mV
Max. Reverse Current
VR = 20V
VR = 40V
IR1
IR2
50
100
nA
Max. Reverse Recovery Time
IF =10mA, IRM = 10mA
Max. Capacitance
tRR
CT
10
5
ns
pF
f= 1MHz, VR = 0V
Note: (1) Each diode
(2) Derate at 2.4mA/0C above 250C
(3) Derate at 4.0mA/0C above 250C
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