Datasheet > SDA06WS

SDA06WS

更新时间： 2024-09-24 06:10:55

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	130K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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SDA06WS 数据手册

SDA06WS

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

PINNING

Features

DESCRIPTION

Cathode

• Small surface mounting type

• High reliability

Anode

Top View

Marking Code: "RJ"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_RM

V_R

I_O

Average Forward Rectified Current

Peak Forward Current

100

I_FM

I_FSM

T_j

200

Peak Forward Surge Current (60 Hz for 1 Cyc.)

Junction Temperature

125

Storage Temperature Range

T_s

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at I_F= 100 mA

V_F

I_R

0.44

Reverse Current

at V_R= 20 V

µA

Capacitance Between Terminals

at V_R= 10 V, f = 1 MHz

C_T

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 22/04/2008

中文翻译

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