Datasheet > SDA-6000SB

SDA-6000SB

更新时间： 2024-01-16 11:51:36

品牌	Logo	应用领域
威讯 - RFMD		射频微波
页数	文件大小	规格书
8页	1823K
描述
GaAs Distributed Amplifier

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技术参数
数据手册

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SDA-6000SB 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	DIE OR CHIP	Reach Compliance Code：	compliant
风险等级：	5.69	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	8 dB	最大输入功率 (CW)：	15 dBm
功能数量：	1	最大工作频率：	50000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-40 °C	封装等效代码：	DIE OR CHIP
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	技术：	GAAS
Base Number Matches：	1

SDA-6000SB 数据手册

SDA-6000

GaAs Distributed Amplifier

Package: Die, 2.21mm x 1.21mm x

0.102mm

RFMD’s SDA-6000 is a directly coupled (DC) GaAs

microwave monolithic integrated circuit (MMIC) distributed

driver amplifier die designed to support a wide array of high

frequency commercial, military, and space applications. They

are ideal for wideband amplifier gain blocks, modulators, clock

drivers, broadband automated test equipment (ATE), military,

and aerospace applications.

Features

■

DC to 50GHz Operation

Output Voltage to 3V_PP

Gain = 8dB Typical

Noise Figure = 4.5dB Typical

80mA Total Current

Applications

■

Drive for Single-Ended (SE) MZM

NRZ, DPSK, ODB, RZ

Clock Driver for RZ and CS Pulse

Carver

■

Broadband ATE

Instrumentation

Military

Aerospace

Functional Block Diagram

Ordering Information

SDA-6000

GaAs Distributed Amplifier, GelPak, 10 pieces or more

SDA-6000SB Sample Bag, GaAs Distributed Amplifier, GelPak, 2 pieces

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421

DS140210

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES^®and RFMD^®are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,

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