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SD8250 PDF预览

SD8250

更新时间: 2024-01-26 07:15:51
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意法半导体 - STMICROELECTRONICS 晶体射频双极晶体管微波电子放大器航空局域网
页数 文件大小 规格书
5页 70K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

SD8250 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, S-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.13Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:BASE
最大集电极电流 (IC):20 A配置:SINGLE
最小直流电流增益 (hFE):10最高频带:L BAND
JESD-30 代码:S-CDFM-F2元件数量:1
端子数量:2最高工作温度:250 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):575 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SD8250 数据手册

 浏览型号SD8250的Datasheet PDF文件第2页浏览型号SD8250的Datasheet PDF文件第3页浏览型号SD8250的Datasheet PDF文件第4页浏览型号SD8250的Datasheet PDF文件第5页 
SD8250  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
.
.
.
REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
5:1 VSWR CAPABILITY @ 1.75 dB RF  
OVERDRIVE  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
OVERLAY GEOMETRY  
.
.
.
.
.
.400 x .400 2LFL (S036)  
METAL/CERAMIC HERMETIC PACKAGE  
hermetically sealed  
POUT 250 W MIN. WITH 8.0 dB GAIN  
=
ORDER CODE  
BRANDING  
STAN250A  
SD8250  
PIN CONNECTION  
DESCRIPTION  
The SD8250 is a high power Class C transistor  
specifically designed for TACAN/DME pulsed out-  
put and driver applications.  
This device is designed for operation under mod-  
erate pulse width and duty cycle pulse conditions  
and is capable of withstanding 5:1 output VSWR  
at rated RF overdrive.  
Low RF thermal resistance and computerized au-  
tomatic wire bonding techniques ensure high re-  
liability and product consistency.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
The SD8250 is supplied in the AMPAC Hermetic  
Metal/Ceramic package with internal Input/Output  
matching structures.  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Power Dissipation* (TC 90°C)  
Device Current*  
Value  
575  
20  
Unit  
W
A
VCC  
TJ  
Collector-Supply Voltage*  
55  
V
°
°
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
C
C
TSTG  
65 to +200  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance(1)  
0.28  
°C/W  
*Applies only to rated RF amplifier operation  
(1) Infra-Red Scan of Hot Spot Junction Temperature at Rated RF Operating Conditions  
July 19, 1994  
1/5  

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