5秒后页面跳转
SD660CS-T3 PDF预览

SD660CS-T3

更新时间: 2024-09-22 22:22:11
品牌 Logo 应用领域
WTE 整流二极管瞄准线功效
页数 文件大小 规格书
3页 47K
描述
6.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

SD660CS-T3 数据手册

 浏览型号SD660CS-T3的Datasheet PDF文件第2页浏览型号SD660CS-T3的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
SD620CS – SD6100CS  
6.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
!
!
Schottky Barrier Chip  
A
C
J
Guard Ring Die Construction for  
Transient Protection  
B
D
!
!
!
!
High Current Capability  
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
E
PIN 1  
2
3
K
G
H
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ L  
P
P
D PAK/TO-252AA  
Mechanical Data  
Dim  
A
B
C
D
E
Min  
6.4  
5.0  
2.35  
Max  
!
!
Case: Molded Plastic  
6.8  
5.4  
Terminals: Plated Leads Solderable per  
MIL-STD-750, Method 2026  
Polarity: Cathode Band  
2.75  
1.60  
5.7  
!
!
!
!
!
PIN 1 -  
PIN 3 -  
+
Case PIN 2  
5.3  
2.3  
0.4  
0.4  
0.3  
Weight: 0.4 grams (approx.)  
Mounting Position: Any  
G
H
J
2.7  
Potive CT  
0.8  
Marking: Type Number  
0.6  
Standard Packaging: 16mm Tape (EIA-481)  
K
L
0.7  
0.50 Typical  
P
2.3  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SD  
SD  
SD  
SD  
SD  
SD  
SD  
Characteristic  
Symbol  
Unit  
620CS 630CS 640CS 650CS 660CS 680CS 6100CS  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
V
A
Average Rectified Output Current  
@TL = 75°C  
6.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
I
FSM  
75  
A
Forward Voltage (Note 1)  
@IF = 3.0A  
VFM  
IRM  
0.55  
0.70  
0.85  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.2  
15  
mA  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance Junction to Ambient  
Operating Temperature Range  
Cj  
RJA  
Tj  
400  
80  
pF  
K/W  
°C  
-50 to +125  
-50 to +150  
Storage Temperature Range  
TSTG  
°C  
Note: 1. Mounted on P.C. Board with 14mm2 (0.13mm thick) copper pad.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SD620CS – SD6100CS  
1 of 3  
© 2002 Won-Top Electronics  

与SD660CS-T3相关器件

型号 品牌 获取价格 描述 数据表
SD660CT PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)
SD-66600-012 MOLEX

获取价格

DISCREETE CABLE
SD667A ETC

获取价格

Mini size of Discrete semiconductor elements
SD669 HITACHI

获取价格

Silicon NPN Epitaxial
SD-67581-001 MOLEX

获取价格

1.27mm (.050") Pitch Serial ATA Crimp
SD-67687-511 MOLEX

获取价格

2.54mm (.100") Pitch SIM Card Connector
SD-67800-008 MOLEX

获取价格

1.27mm (.050") Pitch Serial ATA High Speed Header
SD-67926-001 MOLEX

获取价格

3.81mm (.150") Pitch Serial ATA IDT Power Receptacle
SD6800BC SILAN

获取价格

通用LED照明驱动电路
SD6802SE SILAN

获取价格

通用LED照明驱动电路