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SD4100

更新时间: 2024-10-01 09:31:07
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ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

SD4100 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.09
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:EMITTER最大集电极电流 (IC):16 A
集电极-发射极最大电压:30 V配置:Single
最小直流电流增益 (hFE):25最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):220 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

SD4100 数据手册

  
SD4100  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI SD4100 is a gold mettalized  
RF power transistor designed for high  
linearity Class-AB operation in UHF  
and band IV and V for TV transmitters.  
It utilizes emitter ballasting for high  
reliability and ruggedness.  
PACKAGE STYLE .450 BAL FLG(A)  
.060x45°  
B
FULL R  
A
.100x45°  
1
1
C
3
E
D
P
F
3
2
2
FEATURES:  
G
H
Common Emitter, Class AB push-pull  
PG = 8.5 dB at 100 W/860 MHz  
Omnigold™ Metalization System  
28 V operations  
J
K
N
M
L
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.055 / 1.40  
A
B
C
D
E
F
.120 / 3.05  
.130 / 3.30  
.785 / 19.94  
.465 / 11.81  
.130 / 3.30  
MAXIMUM RATINGS  
.455 / 11.56  
.120 / 3.05  
16 A  
65 V  
IC  
VCB  
VCE  
PDISS  
TJ  
.230 / 5.84  
.838 / 21.28  
.850 / 21.59  
1.105 / 28.07  
.535 / 13.59  
.005 / 0.15  
.065 / 1.65  
.095 / 2.41  
.195 / 4.95  
.455 / 11.56  
G
H
J
1.095 / 27.81  
.525 / 13.34  
.002 / 0.05  
.055 / 1.40  
.080 . 2.03  
30 V  
K
L
220 W @TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
0.8 °C/W  
M
N
P
.445 / 11.30  
TSTG  
θJC  
1 = COLLECTOR 2 = BASE 3 = EMITTER  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 80 mA  
IC = 120 mA  
IE = 20 mA  
VE = 28 V  
30  
V
40  
BVCER  
BVEBO  
ICES  
V
RBE = 75 Ω  
3.5  
V
10  
mA  
---  
V
CE = 5.0 V  
IC = 4.0 A  
25  
120  
hFE  
VCE = 28 V  
POUT = 100 W  
ICQ = 2 X 100 mA  
PREF = 25 W  
f = 860 MHz  
8.5  
55  
PG  
ηC  
dB  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

SD4100 替代型号

型号 品牌 替代类型 描述 数据表
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