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SD2932 PDF预览

SD2932

更新时间: 2024-01-10 22:41:10
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频
页数 文件大小 规格书
13页 125K
描述
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

SD2932 数据手册

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SD2932  
RF POWER TRANSISTORS  
HF/VHF/UHF N-CHANNEL MOSFETs  
PRELIMINARY DATA  
ν
ν
ν
GOLD METALLIZATION  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION,  
PUSH-PULL  
ν
POUT = 300W MIN. WITH 15 dB GAIN @175  
MHz  
DESCRIPTION  
The SD2932 is a gold metallized N-Channel MOS  
field-effect RF power transistor. The SD2932 is  
intended for use in 50V dc large signal  
applicationsup to 250 MHz  
M244  
epoxy sealed  
ORDER CODE  
SD2932  
BRANDING  
TSD2932  
PIN CONNECTION  
1. Drain  
2. Gate  
3. Source  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)  
Symbol  
Parameter  
Value  
125  
Unit  
V(BR)DSS Drain Source Voltage  
V
V
VDGR  
VGS  
ID  
125  
Drain-Gate Voltage (RGS = 1M)  
Gate-Source Voltage  
±20  
40  
V
Drain Current  
A
PDISS  
Tj  
Power Dissipation  
500  
W
oC  
oC  
Max. Operating Junction Temperature  
Storage Temperature  
+200  
TSTG  
-65 to 150  
THERMAL DATA  
Rth(j-c)  
Rth(c-s)  
Junction-Case Thermal Resistance  
Case Heatsink Thermal Resistance  
0.35  
0.12  
oC/W  
oC/W  
Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).  
1/13  
March 2000  

SD2932 替代型号

型号 品牌 替代类型 描述 数据表
MRF151G MACOM

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1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

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