Datasheet > SD1540-8

SD1540-8

更新时间： 2024-11-24 22:50:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频微波电子航空
页数	文件大小	规格书
5页	75K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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中文翻译

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数据手册

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SD1540-8 数据手册

SD1540-08

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

DESIGNED FOR HIGH POWER PULSED

IFF, DME, TACAN APPLICATIONS

350 WATTS (typ.) IFF 1030 - 1090 MHz

300 WATTS (min.) DME 1025 - 1150 MHz

290 WATTS (typ.) TACAN 960 - 1215 MHz

6.3 dB MIN. GAIN

REFRACTORY GOLD METALLIZATION

.400 x .400. 2LFL (M138)

EMITTER BALLASTING AND LOW

THERMAL RESISTANCE FOR

RELIABILITY AND RUGGEDNESS

hermetically sealed

ORDER CODE

BRANDING

SD1540-8

SD1540-08

20:1 LOAD VSWR CAPABILITY AT

SPECIFIED OPERATING CONDITIONS

INPUT/OUTPUT MATCHED, COMMON

BASE CONFIGURATION

PIN CONNECTION

DESCRIPTION

The SD1540-08 is a gold metallized silicon, NPN

power transistor designed for applications requiring

high peak power and low duty cycles such as

IFF, DME and TACAN. The SD1540 is packaged

in a metal/ceramic package with internal input/out-

put matching resulting in improved broadband per-

formance and a low thermal resistance.

1. Collector

2. Base

3. Emitter

4. Base

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

V_CBO

V_CES

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

3.5

P_DISS

T_J

Power Dissipation

875

+200

Junction Temperature

Storage Temperature

T_STG

65 to +150

0.20

−

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance

°C/W

1/5

November 1992

12 3 4 5

中文翻译

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