Datasheet > SD1492

SD1492

更新时间： 2024-11-25 09:31:19

品牌	Logo	应用领域
ASI		晶体晶体管射频光电二极管放大器局域网
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册
替代型号

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SD1492 数据手册

SD1492

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI SD1492 is a Common

Emitter Device Designed for Class AB

operation in UHF Amplifier

Applications in Television Band IV & V

Transmitters.

PACKAGE STYLE .450 BAL FLG.(A)

.120 x 45°

FULL R

.208

FEATURES INCLUDE:

• Gold Metalization

• Emitter Ballasting

• Internal Matching

4X.060 R

.050 NOM.

.210

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

MAXIMUM RATINGS

.373 / 9.47

.385 / 9.78

.205 / 5.21

25 A

.120 / 3.25

.411 / 10.44

.825 / 20.96

.525 / 13.34

1.255 / 31.88

1.675 / 42.55

.002 / 0.05

.130 / 3.30

.421 / 10.69

.865 / 21.97

.535 / 13.59

1.265 / 32.18

1.685 / 42.80

.006 / 0.15

.105 / 2.67

.135 / 3.43

.250 / 6.35

.457 / 11.61

I_C

60 V

V_CBO

P_DISS

T_J

310 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.55 °C/W

.095 / 2.41

.115 / 2.92

T_STG

θ_JC

.445 / 11.30

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

TEST CONDITIONS (PER SIDE)

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_E= 50 mA

V_CE= 28 V

BV_CBO

BV_EBO

I_CES

3.0

---

h_FE

_CE= 5.0 V

_CB= 28 V

_CE= 28 V

I_C= 3.0 A

C_OB

f = 1.0 MHz

100

P_OUT

G_P

I_CQ= 2 X 500 mA

I_CQ= 2 X 250 mA

f = 860 MHz

150

6.5

_CE= 28 V

_out= 150 W

n_C

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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SD1492 替代型号

型号	品牌	替代类型	描述	数据表
SD4100	ASI	功能相似	NPN SILICON RF POWER TRANSISTOR
SD4100	STMICROELECTRONICS	功能相似	RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS
TPV8100B	ASI	功能相似	NPN SILICON RF POWER TRANSISTOR

与SD1492相关器件

型号	品牌	获取价格	描述	数据表
SD1492-2	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
SD1495	MICROSEMI	获取价格	RF & MICROWAVE TRANSISTORS 850-890 MHz CLASS C BASE STATIONS
SD14950-03	MICROSEMI	获取价格	RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS
SD1495-03	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,
SD1495-03	ADPOW	获取价格	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC,
SD14950-3	MICROSEMI	获取价格	RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS
SD1495-3	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC,
SD1495E3	MICROSEMI	获取价格	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,
SD1496	MICROSEMI	获取价格	RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS
SD1496-03	MICROSEMI	获取价格	RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN