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SD1169

更新时间: 2024-09-27 04:05:19
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 23K
描述
NPN SILICON RF POWER TRANSISTOR

SD1169 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65最大集电极电流 (IC):6 A
基于收集器的最大容量:200 pF集电极-发射极最大电压:18 V
配置:Single最小直流电流增益 (hFE):5
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

SD1169 数据手册

  
SD1169  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI SD1169 is a Common  
Emitter Device Designed for Class C  
Amplifier Applications in HF Land  
Mobile Radios.  
PACKAGE STYLE .500 4L STUD  
FEATURES INCLUDE:  
· Aluminum Metalization  
· Emitter Ballasting  
MAXIMUM RATINGS  
IC  
6 A  
VCB  
PDISS  
TJ  
36 V  
80 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
2.2 OC/W  
TSTG  
qJC  
1 = COLLECTOR  
2 & 4 = EMITTER  
3 = BASE  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 100mA  
IC = 50mA  
IE = 10mA  
VCB = 15 V  
VCE = 5.0 V  
18  
V
36  
V
4.0  
V
5
mA  
---  
hFE  
IC = 1.0 A  
5
COB  
VCB = 12.5 V  
VCE = 12.5 V  
f = 1.0 MHz  
f = 88 MHz  
200  
pF  
GPE  
6.0  
7.5  
65  
dB  
%
POUT = 40 W  
h C  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  

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