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SD1146 PDF预览

SD1146

更新时间: 2024-11-01 22:43:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管射频微波
页数 文件大小 规格书
4页 178K
描述
RF & MICROWAVE TRANSISTORS

SD1146 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:POST/STUD MOUNT, O-PUPM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
最大集电极电流 (IC):2 A基于收集器的最大容量:45 pF
集电极-发射极最大电压:16 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-PUPM-F4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:FLAT端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):470 MHz

SD1146 数据手册

 浏览型号SD1146的Datasheet PDF文件第2页浏览型号SD1146的Datasheet PDF文件第3页浏览型号SD1146的Datasheet PDF文件第4页 
SD1146  
RF & MICROWAVE TRANSISTORS  
R F P R O D U C T S D I V I S I O N  
PRODUCT PREVIEW  
DESCRIPTION  
KEY FEATURES  
The SD1146 is a 12.5 V Class C epitaxial silicon NPN planar  
transistor designed primarily for UHF communications. This device  
utilizes improved metallization to achieve infinite VSWR at rated  
operating conditions.  
!"470 MHz  
!"12.5 Volts  
!"Efficiency 60%  
!"Common Emitter  
!"P  
OUT = 10 W Min.  
IMPORTANT:  
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
!"G  
P = 6.0 dB Gain  
APPLICATIONS/BENEFITS  
!"UHF Mobile  
Applications  
C)  
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°  
Symbol  
VCBO  
VCEO  
VCES  
VEBO  
IC  
Parameter  
Value  
36  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
16  
V
36  
V
4.0  
V
2.0  
A
Power Dissipation  
Junction Temperature  
Storage Temperature  
37.5  
W
°C  
°C  
PDISS  
TJ  
+200  
-65 to +150  
TSTG  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
4.7  
°C/W  
Copyright 2000  
Microsemi  
Page 1  
MSC1613.PDF 2000-11-26  
RF Products Division  
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855  

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