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SD1146 PDF预览

SD1146

更新时间: 2024-11-02 04:05:19
品牌 Logo 应用领域
ADPOW 晶体射频和微波晶体管
页数 文件大小 规格书
4页 132K
描述
RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

SD1146 技术参数

生命周期:Transferred包装说明:POST/STUD MOUNT, O-PUPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.61最大集电极电流 (IC):2 A
基于收集器的最大容量:45 pF集电极-发射极最大电压:16 V
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-PUPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):37.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:UPPER晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):470 MHz
Base Number Matches:1

SD1146 数据手册

 浏览型号SD1146的Datasheet PDF文件第2页浏览型号SD1146的Datasheet PDF文件第3页浏览型号SD1146的Datasheet PDF文件第4页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
SD1146  
RF AND MICROWAVE TRANSISTORS  
UHF MOBILE APPLICATIONS  
Features  
·
·
·
·
·
470 MHz  
12.5 Volts  
Efficiency 60%  
Common Emitter  
POUT = 10 W Min.  
GP = 6.0 dB Gain  
·
DESCRIPTION:  
The SD1146 is a 12.5 V Class C epitaxial silicon NPN planar  
transistor designed primarily for UHF communications. This device  
utilizes improved metallization to achieve infinite VSWR at rated  
operating conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
VCEO  
VCES  
VEBO  
IC  
Parameter  
Value  
36  
Unit  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
16  
36  
V
4.0  
V
2.0  
A
PDISS  
TJ  
Power Dissipation  
37.5  
W
°C  
°C  
Junction Temperature  
Storage Temperature  
+200  
-65 to +150  
TSTG  
Thermal Data  
RTH(j-c)  
Junction-Case Thermal Resistance  
4.7  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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