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SD1144 PDF预览

SD1144

更新时间: 2024-11-01 22:43:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管射频微波
页数 文件大小 规格书
4页 178K
描述
RF & MICROWAVE TRANSISTORS

SD1144 技术参数

生命周期:Transferred包装说明:POST/STUD MOUNT, O-PRPM-F4
针数:4Reach Compliance Code:unknown
风险等级:5.47最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-PRPM-F4JESD-609代码:e0
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:FLAT端子位置:RADIAL
晶体管元件材料:SILICON标称过渡频率 (fT):470 MHz

SD1144 数据手册

 浏览型号SD1144的Datasheet PDF文件第2页浏览型号SD1144的Datasheet PDF文件第3页浏览型号SD1144的Datasheet PDF文件第4页 
SD1144  
RF & MICROWAVE TRANSISTORS  
R F P R O D U C T S D I V I S I O N  
PRODUCT PREVIEW  
DESCRIPTION  
KEY FEATURES  
The SD1144 is a 12.5 V Class C epitaxial silicon NPN planar  
transistor designed primarily for UHF communications. This device  
utilizes improved metallization to achieve infinite VSWR at rated  
operating conditions.  
!"470 MHz  
!"12.5 Volts  
!"Common Emitter  
!"Collector Efficiency  
60%  
IMPORTANT:  
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
!"P  
OUT = 2.0 W Min.  
!"G  
P = 9 dB Gain  
APPLICATIONS/BENEFITS  
!"UHF Mobile  
Applications  
C)  
= 25°  
ABSOLUTE MAXIMUM RATINGS (T  
CASE  
Symbol  
VCBO  
VCEO  
VCES  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
36  
16  
V
36  
V
4.0  
V
0.4  
A
Power Dissipation  
Junction Temperature  
Storage Temperature  
5.0  
W
°C  
°C  
PDISS  
TJ  
+200  
-65 to +150  
TSTG  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
35  
°C/W  
Copyright 2000  
Microsemi  
Page 1  
MSC1613.PDF 2000-11-27  
RF Products Division  
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855  

SD1144 替代型号

型号 品牌 替代类型 描述 数据表
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