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SD1143 PDF预览

SD1143

更新时间: 2024-11-24 04:05:19
品牌 Logo 应用领域
ADPOW 晶体射频和微波晶体管
页数 文件大小 规格书
4页 117K
描述
RF AND MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

SD1143 技术参数

生命周期:Transferred包装说明:POST/STUD MOUNT, O-PRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.6最大集电极电流 (IC):2 A
基于收集器的最大容量:45 pF集电极-发射极最大电压:18 V
配置:SINGLE最小直流电流增益 (hFE):5
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-PRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):175 MHz
Base Number Matches:1

SD1143 数据手册

 浏览型号SD1143的Datasheet PDF文件第2页浏览型号SD1143的Datasheet PDF文件第3页浏览型号SD1143的Datasheet PDF文件第4页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
SD1143  
RF AND MICROWAVE TRANSISTORS  
VHF MOBILE APPLICATIONS  
Features  
·
·
·
·
175 MHz  
12.5 Volts  
Common Emitter  
POUT = 10 W Min.  
GP = 10 dB Gain  
·
DESCRIPTION:  
The SD1143 is a 12.2 V Class C epitaxial silicon NPN planar  
transistor designed primarily for VHF Communications. It  
withstands very high VSWR under operating conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
VCEO  
VCES  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
Value  
36  
18  
36  
4.0  
Unit  
V
V
V
V
2.0  
A
PDISS  
TJ  
TSTG  
Power Dissipation  
Junction Temperature  
Storage Temperature  
20  
W
°C  
°C  
+200  
-65 to +150  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
8.75  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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