Datasheet > SD1143-01

SD1143-01

更新时间： 2024-11-02 04:05:19

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波放大器局域网
页数	文件大小	规格书
3页	106K
描述
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

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中文翻译

获取价格

技术参数
数据手册

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SD1143-01 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, O-PRFM-F4
Reach Compliance Code：	unknown	风险等级：	5.6
其他特性：	WITH EMITTER BALLASTED RESISTOR	最大集电极电流 (IC)：	2 A
基于收集器的最大容量：	45 pF	配置：	SINGLE
最高频带：	VERY HIGH FREQUENCY BAND	JESD-30 代码：	O-PRFM-F4
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	RADIAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

SD1143-01 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

SD1143-01

RF & MICROWAVE TRANSISTORS

VHF MOBILE APPLICATIONS

Features

175 MHz

12.5 VOLTS

P_OUT= 10 W

G_P= 10 dB MINIMUM

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The SD1143-01 is a 12.5 V epitaxial silicon, NPN transistor

designed primarily for Class C, VHF communications

equipment. Emitter ballast resistors provide high VSWR

operating capability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CBO

Parameter

Value

Unit

Collector-Base Voltage

V_CER

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

V_EBO

I_C

4.0

2.0

P_DISS

T_J

Power Dissipation

°C

Junction Temperature

Storage Temperature

+200

-65 to +150

T_STG

THERMAL DATA

R_TH(J-C)

Junction-case Thermal Resistance*

°C/W

8.75

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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SD-114-G-21B	SAMTEC	获取价格	Board Connector, 28 Contact(s), 2 Row(s), Female, Straight, Solder Terminal, Socket, ROHS
SD-114-G-21B-N	SAMTEC	获取价格	IC Socket, DIP28, 28 Contact(s), 2.54mm Term Pitch, 0.1inch Row Spacing, Wire Wrap