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SD1127 PDF预览

SD1127

更新时间: 2024-11-19 22:43:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管射频微波通信
页数 文件大小 规格书
3页 108K
描述
RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS

SD1127 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-39
包装说明:M246, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.42最大集电极电流 (IC):0.64 A
基于收集器的最大容量:20 pF集电极-发射极最大电压:18 V
配置:SINGLE最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON

SD1127 数据手册

 浏览型号SD1127的Datasheet PDF文件第2页浏览型号SD1127的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
SD1127  
RF & MICROWAVE TRANSISTORS  
VHF COMMUNICATIONS  
Features  
·
DESIGNED FOR VHF MILITARY AND COMMERCIAL  
EQUIPMENT  
·
·
4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN  
GROUNDED EMITTER CONFIGURATION  
DESCRIPTION:  
THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR  
ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A  
BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED  
EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25ºC)  
Symbol  
Parameter  
Value  
8.0  
Unit  
W
PDISS  
Total Power Dissipation *  
VCBO  
VCEO  
IC  
Collector-base Voltage  
Collector-emitter Voltage (IB=0)  
Collector Current *  
36  
18  
V
V
A
0.64  
TSTG  
TJ  
Storage Temperature  
Junction Temperature  
-65 to 200  
200  
ºC  
ºC  
*At RF Conditions  
Thermal Data  
RTH(J-C)  
Thermal Resistance Junction-case  
21.9  
°C/W  
MSC0936.PDF 10-15-98  

SD1127 替代型号

型号 品牌 替代类型 描述 数据表
NTE361 NTE

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Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz
2SC1947 MITSUBISHI

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NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio
MRF237 ASI

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SILICON NPN RF POWER TRANSISTOR

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