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SD106WS/D6 PDF预览

SD106WS/D6

更新时间: 2024-11-27 15:50:47
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 29K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM),

SD106WS/D6 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.58
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 V最大非重复峰值正向电流:1 A
元件数量:1最高工作温度:150 °C
最大输出电流:0.2 A最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

SD106WS/D6 数据手册

 浏览型号SD106WS/D6的Datasheet PDF文件第2页 
SD106WS  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Schottky Diodes  
SOD-323  
.012 (0.3)  
Cathode Band  
Pad Layout SOD-323  
0.055  
(1.40)  
0.062  
(1.60)  
Dimensions in inches  
Toand(millimeters)  
.059 (1.5)  
.043 (1.1)  
.010 (0.25)  
min.  
Features  
• Low turn-on voltage • Fast switching  
• Microminiature plastic package  
• This device is protected by a PN junction guard ring  
against excessive voltage, such as electrostatic dis-  
charge.  
Mechanical Data  
Case: SOD-323 plastic package  
Weight: approximately 0.004g  
Marking Code: S2  
Packaging Codes/Options:  
• Ideal for protection of MOS devices, steering,  
biasing, and coupling diodes for fast switching and  
low logic level applications.  
D5/10K per 13reel (8mm tape), 30K/box  
D6/3K per 7reel (8mm tape), 30K/box  
Maximum Ratings and Thermal Characteristics(TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
V
Continuous Reverse Voltage  
Forward Current  
VR  
30  
IF  
200  
mA  
A
Forward Surge Current, tp = 10ms  
Power Dissipation TC = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
IFSM  
Ptot  
RΘJA  
TJ  
1.0  
250(1)  
500(1)  
150  
mW  
°C/W  
°C  
Storage Temperature Range  
TS  
65 to +150  
°C  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
IR = 100µA  
VR = 30V  
Min  
Typ  
Max  
Unit  
Reverse Breakdown Voltage  
Leakage Current  
BVR  
30  
V
IR  
5.0  
µA  
IF = 2.0mA  
IF = 15mA  
IF = 100mA  
IF = 200mA  
260  
320  
420  
490  
Forward Voltage  
VF  
mV  
pF  
550  
Junction Capacitance  
Ctot  
VR = 10V, f = 1.0MHz  
15  
Note: (1) Valid provided that electrodes are kept at ambient temperature  
Document Number 88248  
13-May-02  
www.vishay.com  
1

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