Datasheet > SD103BWS

SD103BWS

更新时间： 2024-09-27 14:53:11

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	284K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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SD103BWS 数据手册

SD103AWS...SD103CWS

Surface Mount Schottky Barrier Diodes

PINNING

DESCRIPTION

Cathode

Features

Anode

• Low forward voltage

Top View

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

Value

Unit

Peak Repetitive Reverse Voltage

SD103AWS

SD103BWS

SD103CWS

SD103AWS

SD103BWS

SD103CWS

Reverse Voltage

V_R

Average Forward Rectified Current

I_F(AV)

I_FSM

350

Non-Repetitive Peak Forward Surge Current at t = 1 s

Power Dissipation

P_tot

200

℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 65 to + 125

Thermal Characteristics

Value

500

Parameter

Symbol

R_θJA

Unit

Typical Thermal Resistance - Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Symbol Min.

Typ.

Max.

Unit

Parameter

Reverse Breakdown Voltage

at I_R= 10 µA

SD103AWS

SD103BWS

SD103CWS

V_(BR)R

Reverse Leakage Current

at V_R= 30 V

at V_R= 20 V

SD103AWS

SD103BWS

SD103CWS

I_R

µA

at V_R= 10 V

Forward Voltage

at I_F= 20 mA

at I_F= 200 mA

V_F

0.37

0.6

Total Capacitance

at V_R= 0 V, f = 1 MHz

Reverse Recovery Time

at I_F= I_R= 200 mA, I_rr= 0.1 I_R, R_L= 100 Ω

C_T

t_rr

1 / 3

Dated: 21/10/2022 Rev: 02

12 3

中文翻译

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