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SD103BWS PDF预览

SD103BWS

更新时间: 2024-11-19 14:51:51
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1164K
描述
SOD-323

SD103BWS 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.75配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
最大非重复峰值正向电流:1.5 A元件数量:1
最高工作温度:125 °C最大输出电流:0.35 A
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

SD103BWS 数据手册

 浏览型号SD103BWS的Datasheet PDF文件第2页浏览型号SD103BWS的Datasheet PDF文件第3页浏览型号SD103BWS的Datasheet PDF文件第4页 
HANGJING ELECTRONICS TECHNOLOGY CO., LTD  
D-323 Plastic-Encapsulate Diodes  
HOTTKY BARRIER DIODE  
SOD-323  
FEATURES  
z
z
z
z
Low Forward Voltage Drop  
Guard Ring Construction for Transient Protection  
Negligible Reverse Recovery Time  
Low Reverse Capacitance  
MARKING:  
SD103AWS:S4  
SD103BWS:S5 SD103CWS:S6  
S6  
The marking bar indicates the cathode  
S4  
S5  
Solid dot = Green molding compound device  
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25  
Parameter  
Symbol  
VRRM  
VRWM  
VR  
SD103AWS  
SD103BWS  
SD103CWS  
Unit  
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
28  
30  
20  
14  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
21  
V
Forward Continuous Current  
350  
mA  
Non-repetitive Peak Forward Surge  
Current @t=8.3ms  
IFSM  
2.0  
A
Power Dissipation  
Pd  
200  
mW  
Thermal Resistance Junction to Ambient  
RθJA  
500  
/W  
Junction Temperature  
T
-40~+125  
j
Storage Temperature  
Electrical Ratings @Ta=25  
Parameter  
TSTG  
-55~+150  
Symbol  
Min  
Typ  
Max  
Unit  
V
Conditions  
Reverse breakdown voltage  
SD103AWS  
40  
30  
20  
IR=100μA  
IR=100μA  
IR=100μA  
IF=20mA  
IF=200mA  
V(BR)  
SD103BWS  
SD103CWS  
0.37  
0.60  
VF  
Forward voltage  
V
Reverse current  
SD103AWS  
VR=30V  
VR=20V  
VR=10V  
IRM  
5.0  
50  
μA  
SD103BWS  
SD103CWS  
Capacitance between terminals  
CT  
trr  
pF  
ns  
VR=0V,f=1.0MHz  
IF=IR=200mA  
Reverse recovery time  
10  
Irr=0.1XIR,RL=100Ω  
www.jscj-elec.com  
1
Rev. - 2.2  

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