Datasheet > SD103B

SD103B

更新时间： 2024-11-02 14:52:39

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
2页	137K
描述
肖特基二极管

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中文翻译

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数据手册

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SD103B 数据手册

SD103A...SD103C

Silicon Schottky Barrier Diodes

for general purpose applications

Max. 0.5

The SD103A, B, C is a metal on silicon Schottky barrier

device which is protected by a PN junction guard ring.

The low forward voltage drop and fast switching make

it ideal for protection of MOS devices, steering, biasing

and coupling diodes for fast switching and low logic

level applications. Other uses are for click suppression,

efficient full wave bridges in telephone subsets, and as

blocking diodes in rechargeable low voltage battery

system.

Min. 27.5

Max. 3.9

Min. 27.5

Max. 1.9

Black

Cathode Band

Black

Part No.

Black

"ST" Brand

XXX

Glass Case DO-35

Dimensions in mm

This diode is also available in MiniMELF case with type

designation LL103A, B, C.

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

Value

Unit

Peak Reverse Voltage

SD103A

SD103B

SD103C

Power Dissipation ¹⁾

400

P_tot

I_FSM

T_j

Single Cycle Surge 60 Hz Sine Wave

Junction Temperature

125

℃

T_Stg

Storage Temperature Range

- 55 to + 175

Thermal Characteristics

Max.

250

Unit

Parameter

Symbol

R_θJA

Thermal Resistance Junction to Ambient ¹⁾

¹⁾Valid provided the leads direct at the case are kept at ambient temperature.

℃/W

Characteristics at T_a= 25℃

Symbol

Typ.

Max.

Unit

Parameter

Forward Voltage

at I_F= 20 mA

at I_F= 200 mA

V_F

0.37

0.6

Reverse Leakage Current

at V_R= 30 V

at V_R= 20 V

at V_R= 10 V

SD103A

SD103B

SD103C

I_R

µA

Junction Capacitance

at V_R= 0 V, f = 1 MHz

C_tot

t_rr

Reverse Recovery Time

at I_F= I_R= 5 mA to 200 mA , recover to 0.1 I_R

1 / 2

Dated : 09/02/2023 Rev : 01

中文翻译

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