Datasheet > SD103B

SD103B

更新时间： 2024-09-26 12:21:27

品牌	Logo	应用领域
鲁光 - LGE		小信号开关二极管
页数	文件大小	规格书
2页	159K
描述
Small Signal Switching Diodes

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中文翻译

获取价格

技术参数
数据手册

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SD103B 技术参数

Case Style：	DO-35	IF(A)：	350
VRRM (V)：	30	IFSM (A)：	15
VF (V)：	0.6	@ IF (A)：	200
Maximum reverse current：	5.0	TRR(nS)：
class：	Diodes

SD103B 数据手册

SD103A-SD103C

Small Signal Switching Diodes

VOLTAGE RANGE: 40 -- 20 V

CURRENT: 400 mW

Features

DO - 35(GLASS)

For general purpose applications

Metal silicon schottkybarrier device which is protected

bya PN junction guard ring. The low forward voltage

drop and fast switching make it ideal for protection of

MOS devices,steering,biasing and coupling diodes for

fast switching and low logic level applications

Mechanical Data

Case:JEDEC DO--35,glass case

Dimensions in millimeters

Polarity: Color band denotes cathode end

Weight: Approx. 0.13 gram

ABSOLUTE RATINGS(LIMITING VALUES)

Symbols

UNITS

SD103A

SD103B

SD103C

Peak reverse voltage

V_RRM

P_tot

400¹⁾

Pow er dissipation (Infinite Heat Sink)

Single cycle surge 60Hz sine wave

Forward continuous current

I_FSM

(AV)

350

125

m A

Junction tenperature

T_J

Storage temperature range

-55 ---+ 150

STG

1)Valid provided that leads at a distance of 4mmfromcase are kept at ambient temperature

ELECTRICAL CHARACTERISTICS

(Ratings at 25 ambient temperature unless otherw ise specified)

Symbols

V_R

Typ.

Max.

Min.

UNITS

SD103A

SD103B

SD103C

Reverse breakdow n voltage

@ I_R=10 A

Leakage current

@ V_R=50V

SD103A,VR=30V

SD103B,VR=20V

SD103C,VR=10V

I_R

μA

Forw ard voltage drop @ I_F=20mA

I_F=200mA

0.37

0.6

Junction capacitance @ V^R=0V,f=1MHz

C_J

t_rr

Reverse recovery time @ I_{F=IR=50mA to 200mA,recover to 0.1 IR}

K/W

Thermal resistance junction to ambient air

R_θJA

250

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mail:lge@luguang.cn

中文翻译

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