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SD103AXGRKG PDF预览

SD103AXGRKG

更新时间: 2024-11-01 09:31:27
品牌 Logo 应用领域
TSC 二极管光电二极管瞄准线
页数 文件大小 规格书
3页 137K
描述
Low VF SMD Schottky Barrier Diode

SD103AXGRKG 技术参数

生命周期:Obsolete包装说明:R-PDSO-F2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.57
Is Samacsys:N其他特性:LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:FLAT
端子位置:DUALBase Number Matches:1

SD103AXGRKG 数据手册

 浏览型号SD103AXGRKG的Datasheet PDF文件第2页浏览型号SD103AXGRKG的Datasheet PDF文件第3页 
SD103AXG  
Low VF SMD Schottky Barrier Diode  
Small Signal Diode  
SOD-523F  
B
C
A
E
Features  
—Low power loss,high current capability  
—Low VF, low reverse current  
—Ultra small SMD package  
—Moisture sensitivity level 1  
—Pb free version and RoHS compliant  
D
F
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Mechanical Data  
—Case :Flat lead SOD-523F small outline plastic package  
Dimensions  
Min  
Max  
Min  
Max  
A
B
C
D
E
F
0.70 0.90 0.028 0.035  
1.50 1.70 0.059 0.067  
0.25 0.40 0.010 0.016  
1.10 1.30 0.043 0.051  
0.60 0.70 0.024 0.028  
0.10 0.14 0.004 0.006  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity : Indicated by cathode band  
—Weight : 1.50 mg(approach)  
—Marking Code : J  
Ordering Information  
Pin Configuration  
Marking  
Part No.  
Package  
Packing  
J
J
SD103AXG RK  
SOD-523F  
3K / 7" Reel  
3K / 7" Reel  
SD103AXG RKG SOD-523F  
Suggested PAD Layout  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
40  
Units  
Reverse Voltage  
VR  
IF  
V
Average Forward Current  
Repetitive Peak Forward Current, tp 1S  
200  
300  
mA  
mA  
IFRM  
Non-Repetitive Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave.  
IFSM  
1
A
Thermal Resistance (Junction to Ambient)  
Junction Temperature  
RθJA  
TJ  
625  
150  
°C/W  
°C  
Storage Temperature Range  
TJ, TSTG  
-65 ~ 150  
°C  
Notes: The suggested land pattern dimensions have seen provided for reference only,as actual pad layouts may vary despending on  
application.  
Version : A10  

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