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SD103AWS-HE3-08 PDF预览

SD103AWS-HE3-08

更新时间: 2024-11-13 15:50:47
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 89K
描述
Rectifier Diode, Schottky, 1 Element, 0.35A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

SD103AWS-HE3-08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:10 weeks风险等级:5.06
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
最大非重复峰值正向电流:2 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.35 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W参考标准:AEC-Q101
最大重复峰值反向电压:40 V最大反向恢复时间:0.01 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SD103AWS-HE3-08 数据手册

 浏览型号SD103AWS-HE3-08的Datasheet PDF文件第2页浏览型号SD103AWS-HE3-08的Datasheet PDF文件第3页浏览型号SD103AWS-HE3-08的Datasheet PDF文件第4页 
SD103AWS, SD103BWS, SD103CWS  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes  
FEATURES  
• The SD103 series is a metal-on-silicon  
Schottky barrier device which is protected by  
a PN junction guard ring  
• The low forward voltage drop and fast  
switching make it ideal for protection of MOS  
devices, steering, biasing, and coupling  
diodes for fast switching and low logic level  
applications  
DESIGN SUPPORT TOOLS click logo to get started  
• For general purpose applications  
Models  
• AEC-Q101 qualified available  
Available  
• Base P/N-E3 - RoHS-compliant, commercial grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
MECHANICAL DATA  
Case: SOD-323  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Weight: approx. 4.3 mg  
Packaging codes/options:  
18/10K per 13” reel (8 mm tape), 10K/box  
08/3K per 7” reel (8 mm tape), 15K/box  
PARTS TABLE  
CIRCUIT  
CONFIGURATION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
SD103AWS-E3-08 or SD103AWS-E3-18  
SD103AWS-HE3-08 or SD103AWS-HE3-18  
SD103BWS-E3-08 or SD103BWS-E3-18  
SD103BWS-HE3-08 or SD103BWS-HE3-18  
SD103CWS-E3-08 or SD103CWS-E3-18  
SD103CWS-HE3-08 or SD103CWS-HE3-18  
SD103AWS  
Single  
S6  
SD103BWS  
SD103CWS  
Single  
Single  
S7  
S8  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VRRM  
VRRM  
VRRM  
IF  
VALUE  
40  
UNIT  
V
SD103AWS  
SD103BWS  
SD103CWS  
Repetitive peak reverse voltage  
30  
V
20  
V
Forward continuous current (1)  
Power dissipation (1)  
350  
200  
2
mA  
mW  
A
Ptot  
Single cycle surge  
10 μs square wave  
IFS;M  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
500  
UNIT  
K/W  
°C  
Junction temperature  
125  
Operating temperature range  
Storage temperature range  
Top  
-55 to +125  
-55 to +150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 2.2, 01-Jun-17  
Document Number: 85682  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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Rectifier Diode, Schottky, 1 Element, 0.35A, 40V V(RRM), Silicon, ULTRA SMALL, PLASTIC PAC