SD103AWS THRU SD103CWS
SMALL SIGNAL SCHOTTKY DIODES
S
E M I C O N D U C T O R
FEATURES
SOD-323
For general purpose applications
The SD103AWS to SD103CWS series is a Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast switching and low logic
level applications. Other applications are click suppressions, efficient full
wave bridges in telephone subsets, and blocking diodes in rechargeable
low voltage battery systems.
1.7+0.1
(
(
J
F
These diodes are also available in the Mini-MELF case with the type
designation LL103A toLL103C ,in the DO-35 case with type
designation SD103A to SD103C and in the SOD-123 case with type
designation SD103AW to SW103CW
MECHANICAL DATA
Case: SOD-323 plastic case
Weight: Approx. 0.004 gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Units
Symbols
Peak Reverse Voltage
SD103AWS
SD103BWS
SD103CWS
VRRM
VRRM
VRRM
V
V
V
40
30
20
400 1)
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 60Hz sine wave
Junction temperature
mW
Ptot
IFSM
TJ
15
A
C
C
125
Storage Temperature Range
-55 to+150
TSTG
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Max.
Typ.
Unis
Symbols
Min.
Leakage current at VR=30V
VR=20V
VR=10V
SD103AWS
SD103BWS
SD103CWS
mA
mA
mA
IR
IR
IR
5
5
5
0.37
0.6
V
V
V
F
Forward voltage drop at IF=20mA
IF=200mA
VF
pF
Junction Capacitance at VR=0V ,f=1MHz
CJ
trr
50
10
Reverse Recovery time at IF=IR=50mA,recover to 200mA
recover to 0.1 IR
ns
650 1)
Thermal resistance,junction to Ambient
RqJA
C
/W
1) Valid provided that electrodes are kept at ambient temperature(SOD-323)
2-116
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