Datasheet > SD103AW-V_10

SD103AW-V_10

更新时间： 2024-02-05 08:26:14

品牌	Logo	应用领域
威世 - VISHAY		小信号肖特基二极管
页数	文件大小	规格书
4页	61K
描述
Small Signal Schottky Diodes

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数据手册

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SD103AW-V_10 数据手册

SD103AW-V, SD103BW-V, SD103CW-V

Vishay Semiconductors

Small Signal Schottky Diodes

Features

• The low forward voltage drop and fast

switching make it ideal for protection of

MOS devices, steering, biasing, and

coupling diodes for fast switching and

low logic level applications.

• Other applications are click suppression,

efficient full wave bridges in telephone

subsets, and blocking diodes in

rechargeable low voltage battery systems.

17431

• The SD103 series is a metal-on-silicon Schottky

barrier device which is protected by a PN junction

guard ring.

• This diode is also available in the MiniMELF case

with the type designations LL103A to LL103C,

DO-35 case with the type designations SD103A to

SD103C and SOD-323 case with type

designations SD103AWS-V to SD103CWS-V.

Mechanical Data

Case: SOD-123

Weight: approx. 10.3 mg

Packaging codes/options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box

GS08/3 k per 7" reel (8 mm tape), 15 k/box

• For general purpose applications

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Parts Table

Part

Ordering code

Type marking

Remarks

SD103AW-V

SD103AW-V-GS18 or SD103AW-V-GS08

SD103BW-V-GS18 or SD103BW-V-GS08

SD103CW-V-GS18 or SD103CW-V-GS08

Tape and reel

SD103BW-V

SD103CW-V

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Part

Symbol

V_RRM

Value

Unit

SD103AW-V

SD103BW-V

SD103CW-V

V_RRM

Peak reverse voltage

Power dissipation

(Infinite heat sink)

400 ¹⁾

P_tot

I_FSM

Single cycle surge

Note

10 µs square wave

¹⁾Valid provided that electrodes are kept at ambient temperature

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

300 ¹⁾

Unit

K/W

°C

R_thJA

T_j

Thermal resistance junction to ambient air

Junction temperature

125

T_stg

Storage temperature range

Note

- 55 to + 150

°C

¹⁾Valid provided that electrodes are kept at ambient temperature

Document Number 85681

Rev. 1.4, 05-Aug-10

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

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