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SD103ATW_1

更新时间： 2024-09-23 04:32:31
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 76K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

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中文翻译

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SD103ATW_1 数据手册

 浏览型号SD103ATW_1的Datasheet PDF文件第2页浏览型号SD103ATW_1的Datasheet PDF文件第3页 
SPICE MODELS: SD103ATW  
SD103ATW  
Lead-free  
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY  
Features  
·
Low Forward Voltage Drop  
A
·
Guard Ring Construction for  
Transient Protection  
SOT-363  
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
·
·
·
·
Fast Switching  
C
B
Low Leakage Current  
B
Three Fully Isolated Schottky Diodes  
Lead Free/RoHS Compliant (Note 3)  
C
H
D
0.65 Nominal  
Mechanical Data  
K
J
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
M
H
·
·
Case: SOT-363  
J
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
L
D
F
K
0.90  
0.25  
0.10  
0°  
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Polarity: See Diagram  
L
M
Terminals: Solderable per MIL-STD-202, Method 208  
a
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
All Dimensions in mm  
TOP VIEW  
·
·
·
Marking: KLL (See Page 3)  
Ordering Information: (See Page 3)  
Weight: 0.006 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
VR(RMS)  
IFM  
V
RMS Reverse Voltage  
28  
mA  
mA  
Forward Continuous Current (Note 1)  
Average Rectified Current (Note 1)  
350  
175  
IO  
Non-Repetitive Peak Forward Surge Current  
(Note 1)  
IFSM  
A
1.0  
@ t £ 10ms  
Pd  
Power Dissipation (Note 4)  
200  
500  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance, Junction to Ambient Air (Note 4)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IRS = 100mA (pulsed)  
40  
¾
¾
V
IF = 1mA  
¾
¾
¾
¾
0.27  
0.32  
0.36  
0.44  
¾
¾
0.37  
0.50  
V
V
V
V
IF = 5mA  
VF  
Forward Voltage Drop  
IF = 20mA  
IF = 100mA  
VR = 10V  
¾
¾
0.2  
0.4  
2.0  
5.0  
mA  
mA  
IR  
CT  
trr  
Reverse Current (Note 2)  
Total Capacitance  
V
R = 30V  
VR = 0V, f = 1.0MHz  
¾
¾
50  
10  
¾
pF  
ns  
IF = IR = 200mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
¾
Notes: 1. This is the maximum rating of single Diode (D or D or D ). In the case of using two or three diodes, the maximum ratings per diode are 75% of the  
1
2
3
ratings for single diode operation.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30374 Rev. 6 - 2  
1 of 3  
SD103ATW  
www.diodes.com  
ã Diodes Incorporated  
123

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